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A p-type deep-depletion mode monocrystalline diamond MOSFET is demonstrated, with a 190-nm-thick controllable channel. Such a device offers new opportunities for a better optimization of the bulk doping versus designed breakdown voltage and the resulting figure of merit. Diamond MOSFETs with Boron doping of ${1.75}\times {10}^{{17}} ~\text {cm}^{-{3}}$ and using 20-nm ALD deposited Al2O3 as the...
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