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A novel superjunction (SJ) vertical UMOSFET with semi-insulating POly-crystalline silicon pillar (SIPOS SJ-UMOS) is proposed and its mechanism is investigated by TCAD simulations. In the off-state, the reshape effect of SIPOS pillars enhances the vertical electric field strength and weakens the lateral field component, which increases the breakdown voltage (BV). In addition, the highly doped $N$ ...
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