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For devices with a 15 micron anode-to-cathode distance, nearly 1.5 times increase in the blocking (breakdown) voltage (from 692 to 1030 V) has been achieved by replacing the alloyed Ohmic contact at the anode electrode of the conventional MOS gated hybrid-anode lateral field-effect rectifier (CMLFER) with a low barrier Schottky contact. The new Schottky-MOS hybrid-anode lateral field-effect rectifier...
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