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A high-performance photodetector with the structure of NiO/SiO2/ZnO nanowires has been proposed. The devices with 6-nm-thick SiO2 exhibited a better rectification ratio ($J_{\mathrm {forward}} / J_{\mathrm {reverse}})$ of 246 at ±2 V, lower dark current density ($J_{\mathrm {dark}})$ of $3.5\times 10^{\mathrm {-7}}$ A/cm$^{2}$ at a reverse bias of 2 V, and superior ultraviolet (UV) sensitivity...
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