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The sub-band formation in the triangular-like potential well in the channel of a tunnel field effect transistor (TFET) results in a delayed onset of the vertical band-to-band tunneling (BTBT) and in a reduction of the ON-current. Furthermore, the roughness of the oxide/semiconductor interface causes density-of-states (DOS) tails, i.e., a smoothing of the otherwise staircase-shaped 2D DOS in the TFET...
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