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A reconfigurable gated Schottky diode is proposed as new high-density and low-power synaptic device that has near-linear changes in conductance. The device has a reverse current of less than 12 nA/$\mu \text{m}$ and an effective device area of 6F2. Since the Al/poly-Si Schottky junction is located on the bottom gate, which has a SiO2/Si3N4/SiO2 charge trap layer, the effective Schottky barrier height...
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