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In this letter, an investigation of the low-frequency (LF) drain noise characteristics of the GaN/ AlGaN/GaN HEMT grown on a SiC substrate has been performed. LF drain noise measurements are performed over the frequency range of 20 Hz–1 MHz by varying chuck temperatures (${T}_{\mathbf {\sf chuck}})$ between 25°C and 100°C. Furthermore, we present the 2-D TCAD physical simulation analysis of this...
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