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Ge pMOSFETs with gate lengths down to 70 nm are fabricated in a Si-like process flow. Reducing the LDD junction depth from 24 to 21 nm effectively reduces short-channel effects. In addition, a reduced source/drain series resistance is obtained using pure boron LDD implants over BF2, resulting in a significant ION boost. Benchmarking shows the potential of Ge to outperform (strained) Si, well into...
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