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High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomic-layer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on compound semiconductors in general. A 0.5-mum gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm shows...
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