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A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (Tinv's) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted Tinv's are benchmarked to independent capacitance-voltage (C-V) measurements. For the first time, device simulation is introduced to understand the fundamental difference in Tinv values extracted using the two...
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