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Temperature -dependent electrical characteristics of thin-film transistors fabricated using oxide–metal–oxide (OMO) and indium–zinc–oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier...
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