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A composite free layer spin-transfer torque random access memory (STT-RAM) cell is proposed for ultra-high density memory. The structure consists of three layers—a high anisotropy interior layer and two low anisotropy outer layers that assist the switching of the interior layer via exchange coupling. Efficiencies ($k_{B}T/\mu \text {A})$ of 4.5 and 4.1 are achieved for the proposed structure with...
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