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Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the upset cross-section...
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