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This paper reports neutron-induced MCU (Multiple Cell Upset) measured in 0.4-V 65-nm 10T SRAM at two incident angles of 0 ° and 60 °. The measurement results show that the ratio of the number of measured MCUs at the angles of 60° to that at 0° is 1.13 in 0.4-V operation, while the ratio of neutrons radiated to the test chip was 50% at 60° . The spatial MCU patterns measured at 60° indicate that forward...
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