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We experimentally characterized and compared the soft error rates of 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs by conducting accelerated alpha and neutron irradiation tests. Measurement results show that an SOTB SRAM has better soft error immunity than a bulk SRAM. In particular, the number of 2-bit multiple cell upsets (MCUs) of SOTB SRAM was smaller by two orders of magnitude than...
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