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Recently it was demonstrated that an asymmetric DRAM capacitor stack can introduce non-volatility and at the same time outperform ferroelectric HfO2 based FeRAM in terms of cycle endurance. With the present work, we provide an in-depth study of the underlying mechanisms and perform a comprehensive retention study that characterizes ferroelectric memories. Piezoelectric force microscopy is applied...
The underlying variability in the ReRAM device operation, while undesired in many applications, can be advantageous for hardware security primitives. ReRAM devices also come with the advantage of having non-linear multi-state operation. By comparison with previous reported ReRAM PUFs, which utilized spatial variations in the devices' binary ON/OFF states, we proposed to use sneak path currents and...
Silicon Carbide (SiC) diodes are already commercially available since 15 years and have gained significant market share in power supply and solar converter applications. In the last few years, the SiC device family was enriched by switches. They become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable...
Comprehending material, technology and design interaction with key reliability metrics is becoming critical to ensure successful product introduction with continued scaling beyond 10nm. This paper summarizes the key challenges for reliability and its implication for the design/technology co-optimization. Building in reliability requires a detailed understanding of material properties, device architecture...
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