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Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts...
In this work we demonstrate a semi-empirical GaN HEMT model implemented in Verilog-A format. The model captures accurately the DC operation of test devices fabricated and measured at IMS CHIPS including the thermal effects. In addition, the off-state leakage current is physically modeled as a space-charge limited current prior to the onset of the physical breakdown. The dynamic current recovery of...
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