The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work investigates, in detail, the electrically gate-all-around (eGAA) Hexagonal NW FET (HexFET) which combines the high current drive of FinFETs with the excellent electrostatic robustness of conventional Gate-All-Around Nanowire (GAA NW) FETs. We evaluate HexFET as a potential successor to FinFET for 5nm node logic and SRAM applications using first principles atomistic-based modeling, calibrated...
We present a 5nm logic technology scaling step-up holistic approach for 5-track standard cell design employing electrically gate-all-around nanowire architecture (EGAA NW) with much reduced parasitic capacitance and increased effective width for better short channel control and stronger drive. We suggest SiGe P-channel by Ge Condensation for intrinsic mobility improvement and substrate strain, conformal...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.