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We simulated the static behavior of scaled FinFETs employing a self-consistent Multi-Subband Ensemble Monte Carlo simulator for non-planar devices. To be able to take into account the three-dimensional device structure, the 2D Schrödinger equation is solved in several cross sections; the coupled solution of the 3D Poisson equation and the 1D Boltzmann transport equation through the ensemble Monte...
In this paper, we study the impact of different device architectures and material properties on the performance of two-dimensional tunnel FETs (2D TFETs). We show that single-gate (SG) device architecture in case of monolayer and few layers two-dimensional materials perform better than doublegate (DG) architecture. Due to sharper band bending at the tunneling junction, SG device offers shorter tunneling...
The availability of graphene and related two-dimensional (2D) crystals in ink form, with on demand controlled lateral size and thickness, represents a boost for the design of printed heterostructures. Here, we provide an overview on the formulation of functional inks and the current development of inkjet printing process enabling the realization of 2D crystal-based heterostructures.
Advanced CMOS nodes target high-performance at lower supply voltage. High-mobility III-V channel materials have the potential to meet this target. Although III-V materials such as InGaAs are beneficial for nFET channels, SiGe (or Ge) provides better hole mobility and is more suited for pFET channels. Therefore, a InGaAs/SiGe hybrid CMOS technology is being pursued for scaled nodes. There are significant...
A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the...
For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or atomic layer deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues...
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