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This paper presents the needed interface geometry from device characterization process that is required for a comprehensive set of load-pull data. It also shows the method to obtain this geometry when the dielectric material used for characterizing the active device is different from the one used for the amplifier. The basics of load-pull method for device characterization are used to make the case...
This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of −35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600–950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values...
Unconditional stability is often a desired criterion in amplifier design. The Smith Tube, a three-dimensional cylindrical extension of the Smith Chart with center frequency represented on the height axis, can be used as a tool to design an unconditionally stable amplifier. The stability circles taken over frequency are extended into a stability surface in the Smith Tube representing regions of stability...
This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high-performance energy-efficient 5G mm-Wave transceiver front-ends. With a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (Psat) of 16.2dBm with a maximum power-added efficiency (PAE) of 41.5% at...
Future radar transmitters will require a fast reconfiguration of their radio-frequency circuitry in order to adapt to changes in operating frequency and spectral output while maintaining high power-added efficiency. In this paper, transistor load-pull measurement results are displayed in the Power Smith Tube using measurements from a tunable-varactor matching network. Measuring load-pull characteristics...
This manuscript presents a simulation based design methodology of an 80-meter Doherty power amplifier with a maximum output power of 40 dBm. The amplifier is designed using a widely available IRF510 enhancement mode MOSFET and lumped elements. The classical Doherty architecture utilizes a Class-AB carrier amplifier and Class-C peaking amplifier. LTSpiceIV is used throughout the design process to validate...
With increasing importance of spectral efficiency an RF power amplifier (PA) needs to be highly linear for the communication system to meet stringent spectral emission requirements. There has been extensive research in memory nonlinear modelling and memory pre-distortion algorithms. All known solutions represent the equivalent discrete baseband PA memory model with a finite impulse response filter...
Reconfigurable devices in cognitive and adaptive radio and radar transmitters must be able to reconfigure power amplifier load impedance quickly in real-time to accommodate changes in operating frequency and spectral performance. This paper focuses on the use of small-signal S-parameters, which provide the optimum small-signal gain load termination, to calculate an intelligent starting point for the...
This paper reports a dual-band radio frequency (RF) high-efficiency power amplifier (PA) employing 0.25 μm gallium nitride (GaN) technology for multi-band transmitter applications. The hybrid PA simultaneously covers 2-distinct telemetry bands, L (1.435–1.85 GHz) and C (5–5.15 GHz). The concurrent PA has a simulated large signal gain of 12.5 dB, saturated output power (Pout) of 35.5 dBm, and power...
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