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This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high-performance energy-efficient 5G mm-Wave transceiver front-ends. With a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (Psat) of 16.2dBm with a maximum power-added efficiency (PAE) of 41.5% at...
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