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A highly efficient two-stage 15 GHz fully-integrated GaN power amplifier (PA) designed for 5G communication is reported. SPICE simulations show this two-stage PA achieves an output 1 dB compression POUT, 1dB = 32.2 dBm with 28.2 dB gain and 30.0% PAE (power-added efficiency) for CW operation at 15 GHz. Its PAE reaches 38.7% at POUT = 34.0 dBm with a gain of 22.0 dB. Simulations also suggest that dynamic...
Carrier aggregation supports an increased total bandwidth, data rate and utilization of available fragmented spectrum, where the latter is a core component of next generation Wi-Fi and Cellular networks, including 5G. Wireless communications receivers with intra-band non-contiguous CA, employing conventional complex mixers and base-band circuitry, are desirable, however risks of VCO injection pulling...
In this paper, we present two microwave devices at 1 GHz for next-generation wireless communication systems. The first device is a magnet-less circulator that consists of three resonant branches connected in a delta topology and spatio-temporally modulated with 120 deg phase difference between each other. The proposed circulator is fully compatible with standard CMOS technologies and holds the promise...
Future RF photonic systems offer the promise of wideband front-end operation, but are limited by linearity in the electrical-to-optical conversion process. This paper presents a fifth-order polynomial predistortion circuit for optical Mach-Zehnder modulator linearization. Inclusion of independently tunable polynomial coefficients provides the flexibility to suppress both third-order (IM3) and fifth-order...
This manuscript presents a simulation based design methodology of an 80-meter Doherty power amplifier with a maximum output power of 40 dBm. The amplifier is designed using a widely available IRF510 enhancement mode MOSFET and lumped elements. The classical Doherty architecture utilizes a Class-AB carrier amplifier and Class-C peaking amplifier. LTSpiceIV is used throughout the design process to validate...
This paper reports a dual-band radio frequency (RF) high-efficiency power amplifier (PA) employing 0.25 μm gallium nitride (GaN) technology for multi-band transmitter applications. The hybrid PA simultaneously covers 2-distinct telemetry bands, L (1.435–1.85 GHz) and C (5–5.15 GHz). The concurrent PA has a simulated large signal gain of 12.5 dB, saturated output power (Pout) of 35.5 dBm, and power...
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