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This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of −35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600–950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values...
Fast tuning of a new evanescent-mode cavity tuner is demonstrated to optimize amplifier device power-added efficiency in simulations. The tuning is accomplished by adjusting the two resonant frequencies of the two-element tuner network with a modified interval halving approach. The tuner model is used to adjust the load impedance presented to a power amplifier device. Simulation results show that...
This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high-performance energy-efficient 5G mm-Wave transceiver front-ends. With a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (Psat) of 16.2dBm with a maximum power-added efficiency (PAE) of 41.5% at...
This paper presents two wideband GaAs MMIC driver power amplifiers (PAs) suitable for X and Ku bands. The required number of stages and number of branches in each stage for an M-stage driver PA architecture is analyzed. Design of wideband matching networks for monolithic microwave integrated circuit (MMIC) driver PAs is explained and design parameters of a cascaded K-section T matching network (MN)...
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