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This conference talk will sum up our recent contributions related to the integration of semiconductor carbon nanotubes (s-SWNTs) as an active material in silicon photonics. This work is motivated by the possible use of s-SWNTs for light emission, detection, and modulation relying on the same hybrid on-silicon integration platform. We will first describe experimental results carried out to prepare...
Optical modulation in the O-Band using a Mach-Zehnder modulator in push-pull configuration is presented and experimentally demonstrated. Open eye diagrams at 25 GBps have been obtained with more than 8 dB extinction ratio with an active length of only 1 mm.
In this work we analyse radio access networks (RAN) deployments from the capacity and cost points of view. We find that in order to support the new radio (NR) with system bandwidth of 800MHz and reduce the number of fibre connections between NR and baseband units (BBU) one can use dense wavelength division multiplexing (DWDM), pulse amplitude modulation (PAM4) or multicore fibre. We also find that...
We propose in this work an original nanobeam cavity geometry for the hybrid integration of active materials in silicon photonics. The key point of this structure is to use Bragg mirrors exploiting a dielectric dispersion band, to form a field-confining cavity core relying on an air dispersion band. The resulting situation opens the way for a gentle confinement of the electromagnetic field in the low-index...
Photonic-electronic integration is a key technology to master data traffic growth and therefore an enabler of future network technologies. For some time now, a novel silicon-based photonic-electronic integration technology, photonic BiCMOS, is under development at IHP. Photonic BiCMOS is a planar technology co-integrating monolithically on a single substrate high-speed RF frontend electronics - by...
The increasing demand for higher data rates and small form factor equipment for optical networks is fuelling research on integrated optical devices with small footprint and broad bandwidth. Here, we present novel design approaches for grating couplers in the silicon and silicon nitride platforms that enable broadband operation and highly efficient coupling. Furthermore, we report experimental findings...
More than ten years ago it was demonstrated that the Pockels effect could be feasible by breaking the crystal symmetry of silicon. Since then, strained silicon devices have been developed by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. However, it has been recently shown that carrier effects could play a significant role and...
Mode division multiplexing is a promising technique that enables highly parallel and compact on-chip optical communications, but its scalability has been hampered by the crosstalk so far. By exploiting supermodes in closely packed waveguide arrays, low crosstalk between waveguides can be achieved when phase mismatch condition is met. This paper considers two techniques to achieve phase mismatch: waveguide...
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