The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This conference talk will sum up our recent contributions related to the integration of semiconductor carbon nanotubes (s-SWNTs) as an active material in silicon photonics. This work is motivated by the possible use of s-SWNTs for light emission, detection, and modulation relying on the same hybrid on-silicon integration platform. We will first describe experimental results carried out to prepare...
This work addresses analysis of hybrid plasmonic/dielectric metamaterials operated in guided wave configurations in the near-infrared domain (» = 1.5 µm). The objective is to achieve an efficient control over the flow of the light in the waveguide using effective index variation induced by metasurface resonances. Specifically we consider a composite guiding structure made of a 2D plasmonic metasurface...
Optical modulation in the O-Band using a Mach-Zehnder modulator in push-pull configuration is presented and experimentally demonstrated. Open eye diagrams at 25 GBps have been obtained with more than 8 dB extinction ratio with an active length of only 1 mm.
Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III–V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultra-shallow laser devices are realized with this concept and optically-pumped...
We propose an ultra-compact solid-state auto-correlator fabricated by Si photonics technology. The correlation waveform is obtained by detecting the overlap of two slow-light pulses counter-propagating in a photonic crystal waveguide integrated with two-photon absorption photodiode array. Since the device does not need a mechanical delay scanner, the full integration on a silicon-on-insulator, easy...
We propose in this work an original nanobeam cavity geometry for the hybrid integration of active materials in silicon photonics. The key point of this structure is to use Bragg mirrors exploiting a dielectric dispersion band, to form a field-confining cavity core relying on an air dispersion band. The resulting situation opens the way for a gentle confinement of the electromagnetic field in the low-index...
Photonic-electronic integration is a key technology to master data traffic growth and therefore an enabler of future network technologies. For some time now, a novel silicon-based photonic-electronic integration technology, photonic BiCMOS, is under development at IHP. Photonic BiCMOS is a planar technology co-integrating monolithically on a single substrate high-speed RF frontend electronics - by...
The decades long development in shrinking footprint and improving performance of photonics integrated circuits has seemingly slowed down in recent years, posing problems in e g interconnects in data centers with their ever increasing power requirements. Thus, routes to a continued development towards smaller footprint, lower power, higher performance integrated nanophotonics will be presented and...
More than ten years ago it was demonstrated that the Pockels effect could be feasible by breaking the crystal symmetry of silicon. Since then, strained silicon devices have been developed by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. However, it has been recently shown that carrier effects could play a significant role and...
We investigate the effect of loss and gain on transmission characteristics of Kerr-nonlinear directional couplers. We consider a symmetric coupler made of two hybrid dielectric-plasmonic slot waveguides and introduce asymmetric gain profile. We classify the resulting steady states of the nonlinear system and demonstrate that asymmetric steady states, which can only occur for an asymmetric gain profile,...
We report on the realization of high-Q/V silicon photonic crystal cavities with resonance wavelengths in the telecom window around 1.55 µm. The cavity designs are based on an effective Aubry-Andrè-Harper bichromatic potential, defined by the superposition of two one-dimensional lattices with an incommensurate ratio between their periodicity constants. This peculiar confinement mechanism allows to...
Mode division multiplexing is a promising technique that enables highly parallel and compact on-chip optical communications, but its scalability has been hampered by the crosstalk so far. By exploiting supermodes in closely packed waveguide arrays, low crosstalk between waveguides can be achieved when phase mismatch condition is met. This paper considers two techniques to achieve phase mismatch: waveguide...
In this paper, a review of the current state of the art of Silicon Nitride photonics integration platforms is presented. These platforms are nowadays employed primarily for bio-photonics and telecom applications, ranging from the visible to the long near infrared. Prospects for the extension to mid- infrared wavelengths and applications are also presented and discussed.
Silicon-plasmonic photodetection based on internal photoemission exploits the intrinsic absorption in plasmonic waveguides at metal-dielectric interfaces. For this purpose we designed an asymmetric metal-semiconductor-metal waveguide with a width of 75 nm. Our plasmonic internal photoemission detector (PIPED) shows a rec-ord-high photocurrent sensitivity of up to S = 0.12 A / W for light at a wavelength...
On-chip wireless optical communications among distant cores in chip multiprocessors can lead to a completely new approach to the limits of current on-chip communication. In fact, using wireless connections mitigates the problems related to the design and the fabrication of hugely complex switching fabrics, where long paths suffer of crosstalk and loss issues. We investigate the possibility of integrating...
Silicon cluster superlattices, which have been generated by direct deposition of a silicon cluster beam with a monodisperse size distribution, give a just solution to bring forth new functional nanomaterials consistent with a sustainable society. Silicon clusters correctively form a unclosed-packed body centered cubic (bcc) superlattice structure with a lattice constant of 2.134±0.002 nm, retaining...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.