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Exploring along the road of More Moore with integration degree increasing significantly, different wafer level 3-D technologies are developed facing various circumstances. Thermal issue has become an important concern in IC designing and manufacturing. Fan-out wafer level package (FOWLP), as one of the most popular packaging trends lately, compared to high cost through silicon via (TSV) based 3D integration...
In this paper, a novel design of bandpass filter with both reconfigurable center frequency as well as controllable fractional bandwidth is presented. Proposed is a three-pole configurable evanescent mode (CEVA) filter that based on low loss Rogers 5880 and consists of two arrays of metallic electromagnetic bandgap (EBG) posts that oriented in both horizontal and vertical direction. In simulation model,...
Advanced power module packaging technology is currently being heavily investigated to take full advantage of Wide Band Gap (WBG) power semiconductor devices. As one of most widely applied power module technologies, intelligent power modules, typically for automotive industries, work well to achieve higher operating frequencies with lower losses by integrating gate driver circuits with power semiconductor...
In this work, we present an effective method to analyze and predict the performance of a pair of differential via through multilayered printed circuit boards (PCBs). A pair of differential vias can be modeled as twin-rod transmission lines in a circuit model. By applying the equations for characteristic impedance in a circuit simulator, this model can quickly and effectively predict the behavior of...
Electromagnetic (EM) and circuit modeling are the prevailing practices for the anticipation and extraction of data transfer performances of 3D interconnects in a system-in-package (SiP). In comparison, this paper proposes a more abstract and cost-efficient evaluation method and an enhancement method thereof from the perspective of network information theory and communication channel modeling. Firstly,...
The S-parameter model and TDR impedance of the uniform microstrip lines by 3D fullwave approach and 2D quasi-static approach are compared. In general, the model consistency is good on most S-parameter components with exceptions in return loss and simulated TDR. The main root cause of this inconsistency has been found to be the loose S-parameter convergence error setting in the 3D electromagnetic simulations...
Silicon Interposers enable very high routing density in between integrated circuits (ICs) that are fabricated in different technologies like 65 nm for power amplifiers and 14 nm FinFET for highest performance. This is not possible within a System on Chip (SoC). While heterogeneous silicon interposer integration is now used in the first products for processor-memory-integration, it is still rarely...
A model of copper and carbon nanotube (CNT) composite filled through silicon via (TSV) is developed to estimate signal delay of a novel interconnect, employed in 3D integrated circuit (IC) design. The main objective of 3D interconnect is to electrically connect two stacks of circuits and offer robust chip functionalities. The 3D integration scheme allows independent design of operational blocks in...
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