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The shallow junction is used in the PDSOI technology. Unfortunately, the standard diode model maybe not suit to this PN junction. A simulation model is proposed based on the PDSOI process. The additional influence of the voltage bias of the junction to the capacitance is considered in this model and then the model is well verified by the measured data.
In this paper, we studied effects of doping concentration on the semi-floating gate (SFG) image sensor by Sentaurus technology computer aided design (TCAD) simulation. Our results show that the doping concentration of about 6e16 cm−3 for both n-well and p-well is appropriate for the SFG sensor. The doping concentration plays an important role on the output current range and the sensitivity of the...
0.18 µm narrow channel input/output (I/O) nMOSFETs with shallow trench isolation (STI) were exposed to 60Co γ-ray irradiation. The parameters such as gate current, transfer characteristics, output characteristics, conductance, transconductance, off-state leakage current, threshold voltage and sub-threshold slope are analyzed for pre- and post-irradiation. Test results show that the gate current, transfer...
A TiN/SiOx/Pt structure was fabricated at room temperature and its resistive switching behaviors were investigated. The device demonstrated a bipolar resistive switching behavior, good stability and excellent scalability. The size effect of resistance and the resistive memory behavior can be explained based on conducting filaments (CFs) composed of oxygen vacancies. The resistive switching behavior...
A wideband capacitor cross-coupled common-gate low-noise amplifier (CGLNA) featured with improved linearity is proposed. The linearity is enhanced by complementary multi-gated transistor (CMGTR) technique. The bulk voltage and scaling size are tuned to shift the nonlinear coefficients of auxiliary transistors, compensating the nonlinearity of main transistors. Simulated in a 0.18 µm RF CMOS process,...
TSV (Through-silicon Via) meets the demands of high speed and low power consumption in 3D integrated circuits. However it faces challenge in signal integrity problem such as crosstalk. TSV to TSV coupling is the most significant crosstalk problem in TSV based 3D ICs. This paper presents a quantitative estimation on the TSV to TSV crosstalk induced interconnect delay, trying to find the worst interconnect...
The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. However, TSV is defect prone. This paper proposes a new scheme based on oscillator to monitor the defects of TSV at the prebond stage.
This paper presents a MTJ Based non-volatile SRAM in 45 nm technology. It combines fast and low power partners with time-division satisfaction of high performance and low leakage energy requirements. It can store and restore the data in memory cells, inputs, outputs, clock, and address signals. Simulations show that the maximum frequency can reach 4.5 GHz. When the sleep time is more than 105 seconds,...
This paper presents an analysis of transient radiation-induced soft error of FinFET SRAMs compared to planar SRAMs. For this purpose, we propose an simulation approach starting from a 3D simulation of particle interactions in transistor structures up to circuit level analysis. The analysis shows that bulk FinFETs exhibit lower sensitivity of transient radiation compared to planar MOSFETs primarily...
In this paper, a source/drain design for vertical channel nanowire FETs involving extension doping profile, spacer dielectric constant and spacer width is proposed and demonstrated by TCAD simulation. The results show that asymmetric graded lightly doped drain (AGLDD) exhibits excellent SCE controllability and driving capability even with relatively large nanowire diameter. By adopting high-k spacer...
An original approach is applied to obtain horizontal InAs nanowires with high density and uniform direction on the patterned silicon-on-insulator substrate via metal organic chemical vapor deposition. Moreover, novel Si-based horizontal InAs nanowire transistors are realized initially. Both all-gate-around structure and InAs bulk channels can boost the transistors to achieve better gate-controlled...
Zinc oxide is a well-known wide band gap semiconductor material which can be applied to thin film transistors. Al-doped ZnO (AZO) has a better electrical conductivity than Zinc oxide at the same time with good photoelectric properties. In this paper, the method of atomic layer deposition (ALD) was used to prepare the ZnO and Al:ZnO (AZO) thin films as the active layers on silicon substrates at 100...
A comparative investigation of γ-ray total dose ionization damage at high and low-level injection (HLI/LLI) for different dose rate irradiation in double polysilicon self-aligned bipolar NPN transistors is presented. The transistors reveal anomalous dose rate radiation responses for Emitter-Base (E-B) electrical field strength in forward active mode. This effect is probably associated with the different...
A flexible rGO-perovskite hybrid photodetector has been fabricated in a solution-based method. X-ray diffraction and UV-absorption characterization demonstrate the high quality of the CH3NH3PbI3 thin films. Through the electrical measurements, it is found that low dark current and representative time-dependent photoresponse to different wavelength is obtained at the same power density. Fast raise/decay...
A novel Dynamic Carrier-Storage IGBT (DCS-IGBT) is proposed. With Gate (hereinafter, G) and Control Gate (hereinafter, CG), two independent gates integrated in one trench area, CG can be applied with different bias to modulate the carrier-storage layer dynamically. When the device is on, positive bias on CG can raise the concentration of the carrier storage layer leading an increase of the current...
Transient capacitance measurement is used to study the trap behaviors in AlGaN/GaN MIS-HEMTs: 1) By measuring transfer characteristics before and after the pulse cycles applied on the gate electrode in AlGaN/GaN MIS-HEMTs, the threshold voltage (Vth) instability induced by the gate pulse is investigated; 2) The change of trap density before and after step-stress applied on drain electrode is also...
The formation of Ti/Al/Ni/Au ohmic contact in AlGaN/GaN high electron mobility transistor (HEMT) by microwave annealing (MWA) has been proposed and studied. In this paper, we investigated the electrical characteristics of this contact structure, as well as its transmission electron microscopy (TEM) images, to analyze the mechanism of MWA for the formation of ohmic contact. Our analysis indicates that...
In this paper, the RBSOA characteristic of nanoscale Partially Narrow Mesa IGBT (PNM-IGBT) is studied by numerical simulation. Result shows that the maximum turn-off critical current of nanoscale PNM-IGBT increases about 12.3% compared with the conventional trench IGBT. The main reason is that the electric field distribution of PNM-IGBT at turn-off state is more flat and uniform than the conventional...
This paper presents a design of unique wireless remote controller, which utilizes WiFi wireless communication technology, providing a hand-held remote controller for an implantable stimulator. Based on MCU STC89C52RC, the controller is realized as a control terminal which issues instructions through WiFi module and receives the returned information, so that the controller realizes the control of the...
Microprocessor plays a key role in Internet of Things which decides the performance and cost. It is also known as the source of the wisdom of the Internet of Things. In order to conform to the development of the Internet of Things, we propose a new network self-adaption dual-core microprocessor architecture. The self-adaption means that the new microprocessor replace the program through the network...
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