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Graphene based field effect transistors (GFETs) are quite sensitive to surface effects, such as the influence from surface adsorbents. In this work, it demonstrates the meta/ferroelectric [P(VDF-TrFE)]/graphene(MFG) configuration can realize the novel nonvolatile memories where competition between the ferroelectric polarization and charging / discharging of graphene / interface traps has been addressed.
In this work, a modeling method is developed so that one can investigate the Electromagnetic Emission (EME) of different interconnection layouts in integrated circuit through simulation. We examine the near field EME from different interconnect layouts for input signal of various frequencies and amplitude of 1V, and we found that the layout indeed affects the EME performances of an integrated circuit...
In this paper, we report the positive bias temperature instability (PBTI) effects of the back-gated MoS2 n-MOSFET with Al2O3 gate dielectric. Multilayer MoS2 was used and all measurements are carried in vacuum to avoid the electric signal contamination by the top MoS2 surface water or oxygen molecules absorption. In the stress phase, the Id-Vg curve shifts to the positive gate bias direction. In the...
This paper presents a low-power high-resolution band-pass ΔΣ modulator for acceleration transducer applications. The proposed band-pass ΔΣ modulator consists of a high-performance 6th order feed-forward ΔΣ modulator with 1-bit quantization. The modulator is fabricated in 0.18 µm 1P6M CMOS process with a core area of 1.47 mm2. This modulator got 90.3 dB peak signal to noise plus distortion ratio(SNDR)...
A modulation depth and output power tunable 5.8-GHz CMOS direct-conversion transmitter based on current-mode operation is proposed in this paper. The proposed transmitter consists of an 8bit DAC, LPF, direct up-conversion mixer, a divided-by-two circuit, and PA. The matching network of PA is outside the chip. A binary, unary, segmented current steering DAC is used with the function to achieve 16 levels...
A 2.4GHz Doherty power amplifier (DPA) using capacitance compensation is proposed in 0.18um TSMC process. Doherty configuration with self-biased cascode transistors is adopted to achieve high output power and efficiency in power back-off region. The lumped element π-network is employed to replace the quarter wave transmission lines and facilitates the integration. Placing the PMOS device in parallel...
A double-π equivalent circuit model well-fitted for on-chip inductors with GaN process is presented in this paper. The equivalent circuit is made up of two cells and can feature the frequency-dependent characteristics well in a wide range of frequency up to 20GHz. The parameter extraction is conducted based on the improved characteristic function method according to four parts. The validation includes...
A method is proposed to derive the barrier for capture of a Random Telegraph Signal from the gate voltage dependence of the capture and emission time constant, assuming inelastic tunneling. The impact of other oxide trap parameters, like, the activation energy and the capture cross section is also investigated.
In this work the Zero Temperature Coefficient (ZTC) is investigated experimentally using state-of-the-art industrial technologies like Ultra-Thin Body and Buried Oxide (UTBB) and triple-gate FinFETs (irradiated and/or strained devices), both fabricated on Silicon On Insulator (SOI) wafers. A simple analytical model to analyze the behavior of the gate-source voltage at the Zero Temperature Coefficient...
A unified formulation for the design of a current observer for the basic topologies of buck converter is presented. The formulation is common for the standard buck converter and the observer is robust to load variation. The observer has been tested in a sliding mode control (SMC) control structure for buck converter and the simulation results show a good performance of the approach.
This paper presents an overview of recent developments in extending the temperature range capability of Mextram, an industry standard bipolar transistor compact model.
Along the logical route of IC test technology reviewing the five blocks of the basic active measurement for system or device under test, we suggest using the apt chaotic circuit as every module for searching novel high yields. To select the Boolean chaotic circuit as supply power, we can fuse Iddq and Iddt into one novel parameter named Iddc representing faults' information in DUT. To verify this...
This paper proposes a full-featured Verification Intellectual Property (VIP) which can be used in functional verification at transaction level. The VIP includes a gold testcase set, a hierarchical testbench and a functional model. Firstly, the natural language specification is quantified and converted to the structured specification models. Secondly, the models are transformed into the codes of testcase...
This paper presents compact modeling for multi-domain system-level simulation based on multi-physics that considers the energy conservation condition, in terms of respective potential and flow quantities. Models for both electrical and non-electrical domains are developed to design a flexible blood pumping system where the blood flow is driven by electrically control organic actuators. The electrical...
In this paper, we proposed a calibration strategy utilizing reference sensor for bio-detection based on GMR sensor. With this calibration strategy, temperature drift effect can be cancelled by about 85%, and the carrier signal can be reduced by 26dB enabling a dynamic range adjustment for quantization. A 90% reduction of front-end common mode noise and error, and a sensitivity of 50ppm or 600 200nm-diameter...
Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on high resistivity silicon substrates are fabricated and tested to analyses the reverse leakage current for silicon PIN detectors application. It is concluded that the contribution of the...
With bias conditions changed during irradiation, the bias dependence of the total dose radiation response of fully depleted (FD) silicon-on-insulator (SOI) n-channel MOS transistors (NMOSFETs) is investigated preliminarily. It is found that the threshold voltage shift of the FD SOI NMOSFETs as a function of total dose exhibits an abrupt inverse change, namely, a unexpected rapid reduction, with increasing...
The Gibbs free energy released during the mixing of river and sea water has been illustrated as a promising source of clean and renewable energy. Reverse electrodialysis (RED) is one major strategy to gain electrical power from this natural salinity, and recently by utilizing nanochannels a novel mode of this approach has shown improved power density and energy converting efficiency. In this work,...
A comparative investigation of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate double polysilicon self-aligned (DPSA) NPN bipolar transistors is presented. Bulk silicon based DPSA NPN transistors show severe current gain degradation at low injection level, and a monotonic increase in current gain degradation with decreasing Emitter-Base (E-B) voltage is observed. SOI...
The excimer laser annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated with different laser energy densities (EDs), ranging from 390mJ/cm2 to 510mJ/cm2, are investigated. It is found that, with the increase of the energy density, the grain size grows larger, the lifetime of minority carrier becomes longer, and the activation energy becomes lower. Poly-Si TFTs fabricated...
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