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A flexible rGO-perovskite hybrid photodetector has been fabricated in a solution-based method. X-ray diffraction and UV-absorption characterization demonstrate the high quality of the CH3NH3PbI3 thin films. Through the electrical measurements, it is found that low dark current and representative time-dependent photoresponse to different wavelength is obtained at the same power density. Fast raise/decay...
The photocurrent in graphene has drawn much attention in recent years. The mechanisms of its production vary in different situations, such as at the interfaces of monolayer-bilayer junction or p-n junction. Here we demonstrate photocurrent generation in graphene-based field-effect transistors (GFETs) with a partially suspended area. Both Raman and photocurrent mapping were performed after a laser-induced...
In graphene FETs, the work function (WF) of electrode materials has remarkable influence on contact properties of Metal/Graphene(M/G). MoOx is a material with extremely high WF, when inserting nanoscale MoOx(x<3) thin layer between the interface of source/drain electrode and graphene in graphene FETs, acting as an efficient hole injection layer, MoOx can induce p-doping to graphene and therefore...
As a basic block of carbon materials with different dimensions, graphene has shown great potential in novel device field. As a result, it becomes extremely important to break the zero-band-gap status of graphene sheet. In this work, the density functional theory (DFT) has been carried out to calculate the electronic structure of La-doped monolayer graphene under both X-direction uniaxial and Y-direction...
We demonstrate a facile method to grow highly uniform monolayer graphene films on copper foils by atmospheric pressure chemical vapor deposition (APCVD). The technique in this method includes lowering flow ratio of methane/hydrogen and extending exposure time to hydrogen. All the multilayer islands will be etched away by hydrogen during this growth process, resulting in obtaining highly uniform monolayer...
The electronic properties of one-dimensional graphene nanoribbons, which could be regarded as the polymerized porphyrins, have been investigated using the first-principle methods. The types of the porphyrins have a great influence on the band gaps (Eg) of the graphene nanoribbons. The Eg as large as 1.48eV can be reached, which is large enough for the design of the logic nanoelectronic devices. The...
Graphene exhibits an extremely high in-plane thermal conductivity, which shows highly prospective value in thermal management and heat spreader application. In this work, graphene sheet was integrated into LED module as intermediate heat spreader with different schemes, and heat dissipation performance was measured and evaluated using standard InfraRed (IR) camera. The experimental data shows that...
Direct growth of graphene by industrially scalable methods on suitable dielectric substrates is critical to the development of practical electronic and spintronic devices. Graphene growth by molecular beam epitaxy on the commensurate substrate h-BN(0001) and on other weakly interacting substrates has previously been demonstrated. We have been able to use MBE to grow graphene on incommensurate Co3O4(111),...
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