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Graphene based field effect transistors (GFETs) are quite sensitive to surface effects, such as the influence from surface adsorbents. In this work, it demonstrates the meta/ferroelectric [P(VDF-TrFE)]/graphene(MFG) configuration can realize the novel nonvolatile memories where competition between the ferroelectric polarization and charging / discharging of graphene / interface traps has been addressed.
The excimer laser annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated with different laser energy densities (EDs), ranging from 390mJ/cm2 to 510mJ/cm2, are investigated. It is found that, with the increase of the energy density, the grain size grows larger, the lifetime of minority carrier becomes longer, and the activation energy becomes lower. Poly-Si TFTs fabricated...
Here we show the effects of N,N-Dimethylformamide (DMF) incorporation in the MAI/IPA precursor on the crystallization process of perovskite film based on MAI/IPA precursor. Perovskite thin films were prepared by the two-step solution deposition. With the incorporation of DMF in the MAI/IPA precursor, the device performance can be enhanced effectively, especially for the short-circuit current density...
A comparative investigation of γ-ray total dose ionization damage at high and low-level injection (HLI/LLI) for different dose rate irradiation in double polysilicon self-aligned bipolar NPN transistors is presented. The transistors reveal anomalous dose rate radiation responses for Emitter-Base (E-B) electrical field strength in forward active mode. This effect is probably associated with the different...
The formation of Ti/Al/Ni/Au ohmic contact in AlGaN/GaN high electron mobility transistor (HEMT) by microwave annealing (MWA) has been proposed and studied. In this paper, we investigated the electrical characteristics of this contact structure, as well as its transmission electron microscopy (TEM) images, to analyze the mechanism of MWA for the formation of ohmic contact. Our analysis indicates that...
Al2O3 films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition (ALD) were post annealed in an ozone atmosphere at 450°C for 15, 25 and 35 minutes. The structure and chemical compound of Al2O3/Ge gate stacks were detected by X-ray photoelectron spectroscopy (XPS) measurements after ozone post annealing (OPA) treatments. It is confirmed by XPS measurements that this OPA treatment...
The current field-effect transistors use nickel-based silicides for contacting the source and drain regions. The thickness of this silicide is trending to ever-thinner values. The influence of this thickness decrease on the formation of nickel silicides was systematically investigated between 0 and 15 nm. Annealing thickness gradients enabled us to distinguish two regimes: films above a critical thickness...
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of interface fixed charges from 1.44×1013 to 3×1012 cm−2 was observed, which leads to a record high threshold voltage (VTH) of +7.6 V obtained in the Al2O3/GaN MOSFETs. The positive interface charges were proposed originating...
In order to mitigate the electric field crowdingingate dielectrics and solve the reliability issue, high dielectric constant (κ) materials such as Al2O3 was applied in SiC metal-oxide-semiconductor (MOS) capacitors. High quality thin film Al2O3 was deposited on 4H-SiC by thermal atomic layer deposition (ALD), followed by post deposition annealing (PDA). The PDA was conducted in oxygen atmosphere at...
This paper presents the 3 MeV proton irradiation results of a 16Mb commercial MRAM. The total ionizing dose(TID) effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×1011 particles/cm2. The peripheral circuits are more sensitive to proton...
Si-nanocrystals (Si-NCs) embedded nitride-oxide-semiconductor (NOS) structure is fabricated by plasma enhanced chemical vapor deposition (PECVD) and post annealing technique. Charging effect in the floating gate structure is then characterized by Kelvin probe force microscopy (KPFM) at the nanoscale. The stored charge density is calculated by an electrostatic analysis, which is on the magnitude of...
This work is focused on synthesis of molybdenum oxide (MoO3) by Plasma Enhanced Atomic layer deposition (PEALD) using molybdenum hexacarbonyl (Mo(CO)6) is selected as precursor for Mo and O2 is adopted as precursor for plasma. Ex-situ growth characterizations were carried out by X-ray reflectivity (XRR), scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy...
Single crystalline GeSn grown on Ge substrate by solid phase epitaxy was developed and employed as the platform to implement Al2O3-gated N-MOSFETs. O2 plasma treatment was confirmed to be an effective avenue for surface passivation by forming GeSnOx. The passivation makes a Dit as low as 1.62×1011 cm−2eV−1 and high peak mobility of 518 cm2/(Vs). To mitigate FL pinning on n-GeSn for low contact resistivity,...
The hexagonally ordered patterns by self-assembly of block copolymer with diameter and spacing down to 23 nm and 15 nm, respectively, are capable of producing Si nanopores with high aspect ratio from patterned Au film. The etching feature size seriously depends on the block copolymer pattern template. The prepared nanostructure patterns were used as substrates for surface enhanced Raman spectroscopy...
We report the characteristics of HfO2/Al2O3 gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of As2O3 during annealing is suppressed by Al2O3 layer. The annealed...
Elevated-metal metal-oxide (EMMO) thin-film transistor (TFT), an alternative device architecture that provides an inherent etch-stop (ES) layer while retaining a small device footprint, is described. By comparing the layout efficiency, performance and reliability of an EMMO and a conventional ES TFT, the superiority of the former is established.
In this work, we present our experimental results on Si GAA NW TFET inverters. The ambipolarity of both n- and p-TFETs was successfully suppressed by employing a drain spacer to create an intrinsic Si region between the drain and the gate, the so-called drain-gate underlap. The complementary TFET inverters show a steep transition between high/low states. Compared with the ambipolar TFET inverter,...
The 2-D limited regrowth of α-Si is proposed to achieve larger grain size and smoother surface simultaneously with conventional rapid thermal annealing process. Transmission line method is carried at room temperature and 100K temperature separately to confirm that the boundary scattering and ionization scattering are possibly suppressed by the capping layer method due to less grain boundary and trapped...
The ultra-shallow NiGe/p+-Ge/n-Ge Schottky junctions with dopant segregation have been fabricated using Indium spin-on dopant and thermal diffusion, followed by NiGe growth with microwave annealing technique. The total junction depth of the NiGe/p+-Ge/n-Ge Schottky junction was scaled down to 9 nm, containing 6-nm-thick NiGe and 3-nm-thick p+-Ge region. It is found that the junction leakage current...
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