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This paper is an overview of low dielectric constant (low-k) materials developed for advanced interconnects and also presents recent innovative solutions for integration of ultra low-k dielectrics in ULSI devices. The innovative approaches include exploration of new candidate materials and technological solutions for interconnects integration in advanced technology nodes.
New 3D integration technology using self-assembly and Cu nano-pillar hybrid bonding are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled with a high alignment accuracy making use of liquid surface tension in a face-up configuration on a carrier wafer, called SAE (Self-Assembly and Electrostatic) carrier...
In this work, we report a feasible compact solution to enhance the dynamic performance of GaN-on-Si power devices by integrating a photon source into the drain terminal of a heterojunction field-effect transistor (FET). Photons can be generated from the photonic-ohmic drain (POD) synchronously with turning on of the channel current. These on-chip generated photons can optically pump the electron traps,...
Light-emitting diodes (LEDs) have been fabricated by using hydrosilylated silicon quantum dots (Si QDs). In these Si-QD LEDs ZnO-nanocrystal films are electron transport layers (ETLs). Poly (N,N′-bis (4-butylphenyl)-N,N′-bis (phenyl)-benzidine) (poly-TPD) films are hole transport layers (HTLs). All the Si-QD LEDs exhibit electroluminescence around the wavelength of ∼740 nm. Relatively low turn-on...
A single photon avalanche diode (SPAD) device with deep P-well is proposed, which is protected by surrounding P-implantation layer, P buried layer and P+ buried layer. The P+ buried layer of this SPAD device has great help to enhance the uniformity of electric field in avalanche multiplication region. The primary contribution of the P buried layer is to improve the electric field at the edge. Therefore,...
This paper presents device and mixed-mode simulations of single photon avalanche diode (SPAD) device. Device simulations show that the breakdown mechanism of our diode is indeed avalanche. Mixed-mode simulations can accurately simulate the ignition of the detector due to photon absorption, the fast avalanche current build-up, the self-sustaining charge-multiplication process, and the self-quenching...
Recent progress in the development of future high-density optical interconnects based on integrated silicon photonics technologies is presented. Optical interconnects by using on-package-type module between CPUs and the potential for use of wavelength-division-multiplex (WDM) toward a higher-amount of data transmission are discussed. The optical link test was successfully demonstrated using our proposed...
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