The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A surface-potential-based compact model for the doped polysilicon (poly-Si) thin-film transistors (TFTs) is proposed in this paper. By develop in gap proximate explicit solutions of the surface potential from the Poisson's equation, we can express the drain current as explicit functions of applied voltages with using the charge sheet approach. Compared with the previous models, high accuracy and efficiency...
The excimer laser annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated with different laser energy densities (EDs), ranging from 390mJ/cm2 to 510mJ/cm2, are investigated. It is found that, with the increase of the energy density, the grain size grows larger, the lifetime of minority carrier becomes longer, and the activation energy becomes lower. Poly-Si TFTs fabricated...
Zinc oxide is a well-known wide band gap semiconductor material which can be applied to thin film transistors. Al-doped ZnO (AZO) has a better electrical conductivity than Zinc oxide at the same time with good photoelectric properties. In this paper, the method of atomic layer deposition (ALD) was used to prepare the ZnO and Al:ZnO (AZO) thin films as the active layers on silicon substrates at 100...
In this work, p-type SnO thin films by DC sputtering at low temperature and TFT structures were fabricated. A probable process window of sputtering atmosphere of a mixture of Ar-O2 was found for SnO TFTs application. Fabricated-type SnO TFTs with Ion/Ioff of 5×103 and mobility of 0.17 cm2/V▾s on Al2O3 dielectrics were fabricated. An unusual drain current shake in subthreshold field was found and more...
A closed-form drain current model for amorphous oxide semiconductor thin-film transistors is proposed in this paper. By adopting the effective charge density method and reformulating Lambert W function as two different exponential terms in different regions, both non-degenerate and degenerate conduction regimes are taken into account. Furthermore, an I–V model considering both the trapped and free...
Electrostatic discharge (ESD) effect in the p-type polycrystalline thin film transistor (poly-Si TFT) are investigated by employing a transmission line pulses with different durations (100ns and 200ns). The experimental results shown that P+/poly-Si junction governs the transition of the off-state phase and on-state phase observed in the TLP I–V curves. In addition, the breakdown mechanism in the...
Reliability of low-temperature poly-Si TFTs fabricated on flexible substrates is investigated under dynamic mechanical stresses such as bending and stretch. It is found that their degradation behaviors are similar, where threshold voltage shifts positively with no changes in the subthreshold behavior and channel mobility. The degradation is attributed to negative charge trapping induced by the mechanical...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.