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The application of carbon-nanotube to reduce interconnect delay is studied in this work, with the emphasis on how it can be used to reduce the inter-metal capacitance. By forming vertically aligned cylindrical pores assisted by vertically grown CNT, mechanically stable ultra-low-k interlayer dielectric with k-value down to 1.89 is experimentally demonstrated. Ways to integrate this process will other...
In this paper, a liquid nitrogen temperature range CMOS smart temperature sensor is presented. Substrate PNP transistors are used for temperature sensing and generating the ADC's reference voltage. Errors resulting from non-idealities in the whole system circuitry are reduced to the 0.1K level. This is achieved by using dynamic element matching (DEM), a chopped proportional to absolute temperature...
A TiN/SiOx/Pt structure was fabricated at room temperature and its resistive switching behaviors were investigated. The device demonstrated a bipolar resistive switching behavior, good stability and excellent scalability. The size effect of resistance and the resistive memory behavior can be explained based on conducting filaments (CFs) composed of oxygen vacancies. The resistive switching behavior...
The photocurrent in graphene has drawn much attention in recent years. The mechanisms of its production vary in different situations, such as at the interfaces of monolayer-bilayer junction or p-n junction. Here we demonstrate photocurrent generation in graphene-based field-effect transistors (GFETs) with a partially suspended area. Both Raman and photocurrent mapping were performed after a laser-induced...
A CMOS bandgap reference using chopping technique for OPAMP offset cancelling is presented in this paper. The OPAMP used in bandgap was intended to improve the precision of the bandgap, but this aim is in some degree reduced by the input referred offset and 1/f noise of the introduced OPAMP. Thus, an effective architecture which contains three pairs of chopping cells is designed to overcome the issue...
Accurate temperature monitoring of the silicon substrate remains to be a key issue for application of novel microwave annealing technology in advanced semiconductor processing. In this paper, a calibration system for temperature monitoring using infrared thermometer pyrometer is designed and temperature accuracy of silicon substrates with various doping concentrations is analyzed. Furthermore, an...
SiC rectifier diodes are important components in the power electronics industry because they have advantages over conventional silicon diodes, including large currents, high operation temperatures, and other similar properties. In the devices' current-voltage characteristics, it is readily observable that the curves at different temperatures have a common cross-over point. We found that the temperature...
In this paper, thermally aware optimized measurement of field programmable gate array (FPGA)-based systems using ring oscillator (RO)-based thermal sensors is proposed for thermal management. The sensor array was distributed uniformly on the FPGA in a novel layout, and was optimized on allocation using a trade-off between sensor number and measurement resolution. This method is suitable for various...
Graphene exhibits an extremely high in-plane thermal conductivity, which shows highly prospective value in thermal management and heat spreader application. In this work, graphene sheet was integrated into LED module as intermediate heat spreader with different schemes, and heat dissipation performance was measured and evaluated using standard InfraRed (IR) camera. The experimental data shows that...
This paper investigates a nondestructive method to measure the heat dissipation capability of slow-wave structure (SWS) of helix traveling-wave-tube (TWT). Bases on the transient temperature rise measurement technology, the thermal resistance model is established for accurate prediction of the heat dissipation of the SWS. And the thermal resistances in different positions of the SWS are acquired....
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