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New 3D integration technology using self-assembly and Cu nano-pillar hybrid bonding are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled with a high alignment accuracy making use of liquid surface tension in a face-up configuration on a carrier wafer, called SAE (Self-Assembly and Electrostatic) carrier...
A TiN/SiOx/Pt structure was fabricated at room temperature and its resistive switching behaviors were investigated. The device demonstrated a bipolar resistive switching behavior, good stability and excellent scalability. The size effect of resistance and the resistive memory behavior can be explained based on conducting filaments (CFs) composed of oxygen vacancies. The resistive switching behavior...
A flexible rGO-perovskite hybrid photodetector has been fabricated in a solution-based method. X-ray diffraction and UV-absorption characterization demonstrate the high quality of the CH3NH3PbI3 thin films. Through the electrical measurements, it is found that low dark current and representative time-dependent photoresponse to different wavelength is obtained at the same power density. Fast raise/decay...
In graphene FETs, the work function (WF) of electrode materials has remarkable influence on contact properties of Metal/Graphene(M/G). MoOx is a material with extremely high WF, when inserting nanoscale MoOx(x<3) thin layer between the interface of source/drain electrode and graphene in graphene FETs, acting as an efficient hole injection layer, MoOx can induce p-doping to graphene and therefore...
This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced. This work may inspire new design of high-performance RRAM based on two-dimensional material and...
In this work, the photolithography processed nickel (Ni) grids were used to replace indium tin oxide (ITO) as the transparent anode for perovskite solar cells. The results show that the Ni grids have a senior adhesion ability to glass substrates than that of Ag grids, and the obtained device show a comparable short circuit current density (JSC) to that of ITO based device, while the open circuit voltage...
Inspired by the computing architecture of human brain, neuromorphic computing promises massively parallel, energy efficient and fault tolerant computation compared with conventional von Neumann approaches. In order to achieve this ambitious goal, one of the crucial tasks is to make devices that can emulate the functions of biological synapses at the physical level. Here we fabricated a novel Pt/TaOx/Ta...
Pentacene organic thin-film transistor (OTFT) using Pd as gate electrode is proposed, with high-k LaZrO as gate dielectric. The Pd film is prepared by e-beam evaporation and then the LaZrO film is deposited by reactive sputtering in Ar/O2 ambience followed by an annealing in N2 at 400 °C. The OTFT achieves an obvious increase in carrier mobility (to 1.02 cm2/V·s), as compared with its counterpart...
The effects of an intentional interface engineering of a heterogeneous CeO2-Nb:SrTiO3 interface on the resistive switching behaviors of HfO2-based resistive random access memory (RRAM) has been investigated. Switching parameters including set voltage, reset voltage, low resistance state and high resistance state, are greatly improved by the interface engineering. Besides, low power consumption RRAM,...
In this letter, an atomistic-level simulation model of bipolar TiO2 RRAM is addressed, which adopts the typical MIM structure and combines the equation of oxygen vacancy transport, current continuity and Joule heating. Based on the model, the dynamic formation and rupture of conductive filament are described in a 3D geometry model of COMSOL. Besides, the electro-thermal model with a conical shape...
Brain-Machine-Interface (BMI) is a system that builds artificial pathways between different parts of the neural system. Due to different application scenarios, a BMI system may consist of a neural signal acquisition, electrical neural stimulation, signal processing, wireless communication, and power management. This paper reviews the state-of-art development in system-on-a-chip BMI design technology...
Filament rupture/restoration induced by movement of defects, e.g. oxygen ions/vacancies, is considered as the switching mechanism in HfO2 RRAM. However, details of filament alteration during switching are still speculative, due to the limitations of existing experiment-based probing techniques, impeding its understanding. In this work, for the first time, an RTN-based defect tracking technique is...
In this paper, we present an easy to use 4-step design method for film bulk acoustic resonator (FBAR) filters, and demonstrated by a FDD-LTE band 7 FBAR Rx filter design case. According to the center frequency and bandwidth of FBAR filter, we determine thickness of each film in the FBAR film stack at the step 1. The step 2 gets the filter's circuit architecture. In the step 3, we obtain the active...
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