The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper is an overview of low dielectric constant (low-k) materials developed for advanced interconnects and also presents recent innovative solutions for integration of ultra low-k dielectrics in ULSI devices. The innovative approaches include exploration of new candidate materials and technological solutions for interconnects integration in advanced technology nodes.
New 3D integration technology using self-assembly and Cu nano-pillar hybrid bonding are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled with a high alignment accuracy making use of liquid surface tension in a face-up configuration on a carrier wafer, called SAE (Self-Assembly and Electrostatic) carrier...
In this work, we report a feasible compact solution to enhance the dynamic performance of GaN-on-Si power devices by integrating a photon source into the drain terminal of a heterojunction field-effect transistor (FET). Photons can be generated from the photonic-ohmic drain (POD) synchronously with turning on of the channel current. These on-chip generated photons can optically pump the electron traps,...
Light-emitting diodes (LEDs) have been fabricated by using hydrosilylated silicon quantum dots (Si QDs). In these Si-QD LEDs ZnO-nanocrystal films are electron transport layers (ETLs). Poly (N,N′-bis (4-butylphenyl)-N,N′-bis (phenyl)-benzidine) (poly-TPD) films are hole transport layers (HTLs). All the Si-QD LEDs exhibit electroluminescence around the wavelength of ∼740 nm. Relatively low turn-on...
A single photon avalanche diode (SPAD) device with deep P-well is proposed, which is protected by surrounding P-implantation layer, P buried layer and P+ buried layer. The P+ buried layer of this SPAD device has great help to enhance the uniformity of electric field in avalanche multiplication region. The primary contribution of the P buried layer is to improve the electric field at the edge. Therefore,...
This paper presents device and mixed-mode simulations of single photon avalanche diode (SPAD) device. Device simulations show that the breakdown mechanism of our diode is indeed avalanche. Mixed-mode simulations can accurately simulate the ignition of the detector due to photon absorption, the fast avalanche current build-up, the self-sustaining charge-multiplication process, and the self-quenching...
Recent progress in the development of future high-density optical interconnects based on integrated silicon photonics technologies is presented. Optical interconnects by using on-package-type module between CPUs and the potential for use of wavelength-division-multiplex (WDM) toward a higher-amount of data transmission are discussed. The optical link test was successfully demonstrated using our proposed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.