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Three-phase voltage-source inverters are becoming widely used in grid applications, due to the increased utilization of renewable energy resources such as photovoltaic (PV) systems. The connection of the inverter to the grid must not deteriorate the voltage quality at the point of the common coupling (PCC). Therefore, the injected current harmonics must not exceed certain level. Reduction of the injected...
High efficient and less pollutant fuel cell stacks are emerging and strong candidates of the power solution used for mobile base stations. In the application of the backup power, the availability and reliability hold the highest priority. This paper considers the reliability metrics from the component-level to the system-level for the power stage used in a fuel cell application. It starts with an...
This paper presents an FPGA-based on-line condition monitoring system integrated at gate-driver voltage level. The system uses the change of on-state voltage and thermal resistance as ageing indicators. The monitoring is realized by implementing an on-line semiconductor power loss measurement system for switching and on-state losses and a thermal model of the module. Apart from the concept, its practical...
Thermal cycling is one of the main sources of aging and failure in power electronics. A possibility to reduce the thermal stress of semiconductors is to control the losses occurring in the semiconductor devices with the target to reduce the thermal cycles. This approach is known as active thermal control. The hardest limit of the existing active thermal control approaches is that they do not offer...
Junction temperature is a critical indicator for health condition monitoring of power devices. Concerning the reliability of emerging silicon carbide (SiC) power semiconductors due to immaturity of new material and packaging, junction temperature measurement becomes more significant and challenging, since SiC devices have low on-state resistance, fast switching speed, and high susceptibility to noise...
IGBT modules suffer from ageing due to thermal and power cycling. Bond wire lift-off or solder layer degradation are the known failure mechanisms. For condition monitoring, an estimation of the junction temperature during operation is necessary. For this purpose, an analog measurement board consisting of simple components is presented. The turn-off delay time is evaluated for temperature estimation...
This paper presents a real-time evaluation of power semiconductor devices in a high performance high power amplifier. The proposed method can represent the life status of the semiconductor modules in ‘odometer’ format. A special challenging case are pulsating load applications like an MRI gradient driver system. The general concepts presented have been evaluated in detail for the MRI case. A detailed...
The previous proposed method for thermal network parameter identification of IGBT module in [1] is based on the pre-knowledge of heat sink's thermal parameter, which neglected the aging effect of heat sink. This paper improved the identification method in [1] and make the improved method be applicable to systems without acknowledge of heat sink's thermal parameter. The theoretical analysis got the...
Junction temperature of insulated gate bipolar transistors (IGBTs) plays an important role in power semiconductor devices reliability. However, it is difficult to have direct access to the chip to obtain the junction temperature. This paper provides a new approach to extract the junction temperature by using combined thermo-sensitive electric parameters (TSEPs) during turn-off transient due to the...
A 700-V class Reverse-Blocking IGBT (RB-IGBT) is developed for large capacity power supply applications inevitably accompanied with increasing parasitic inductance and high current slew rate relative to their medium capacity counterparts. Compared with 600-V RB-IGBT, the device allows high dynamic surge voltage and fast switching to reduce turn-off loss by 35% under an advanced T-type-NPC three level...
In this paper, the effect of junction temperature swing duration on the lifetime of a transfer molded Intelligent Power IGBT Module is studied and a relevant lifetime factor is modeled. A temperature swing duration dependent lifetime factor is defined based on 38 accelerated power cycling test results under 6 different conditions and it may improve a lifetime model for lifetime prediction of IGBT...
This paper presents the finding of thermal characterization of polycrystalline diamond for power semiconductor device modules in a converter. Comparisons of measured thermal performance of two diamond demonstrators, consisting of metalized diamond tiles attached to aluminum and copper forced air cooled heat sinks; show that power dissipation can be increased from 278W to 535W when compared to commercial...
It is well known that the dynamical change of the thermal stress in the power devices is one of the major factors that have influences on the overall efficiency and reliability of power electronics. The main objective of this paper consists of identifying the main parameters that affect the thermal cycling of power devices in a motor drive application and modelling their impact on the thermal stress...
This paper presents a unified space vector modulation (SVM) algorithm for lifetime prolongation of thermally-overheated power semiconductor devices in multilevel inverters. Thermal overheating is the main cause of shortened-lifetime and open-circuit faults of the devices. Power semiconductor devices are subjected to thermal overheating due to their ageing that results from continuous overloading and...
The junction temperature of power semiconductors in power converters must not exceed its maximum limits and it is of major importance for several failure mechanisms. But still, the junction temperature is hard to access. Direct measurement is not practical for industrial applications, indirect measurements require substantial effort and available junction temperature models have high calculation effort...
This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short...
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