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Future ultra-scaled logic and low-power systems require fundamental advances in semiconductor device technology. Due to power constraints, device concepts capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if scaling of conventional computational architectures is to continue. Likewise, ultra low power systems also benefit from devices capable of maintaining performance...
Two-dimensional (2D) atomic crystals are considered to be very promising for nanoelectronics and spintronics applications. It provides a large class of materials proposed to be important for long distance spin transport, spin polarized tunneling and large spin-orbit coupling. Here I will discuss spintronic aspects of these 2D materials and their heterostructures. Graphene is considered to be an ideal...
Electric-field control of spin states has been studied in InGaAs-based coupled nanostructures composed of quantum dots (QDs) and wells (QWs), where electron spins optically excited in the QW can be transferred into the QDs via tunneling depending on the strength of applied electric field. The photoluminescence (PL) intensity in the QDs and the circular polarization, reflecting the electron-spin states...
We study the molecular wire connected to leads as the fundamental unit of a quantum biomimetic electronic nose - a chemical sensor inspired by the vibration theory of olfaction. This is based upon inelastic tunneling transport in the molecular wire, which is treated using the Non-Equilibrium Green Function within the self-consistent Born approximation.
Resistance switching of metal nanogap structures were observed using a scanning tunneling microscope (STM) equipment. Clear negative differential resistances in current-voltage curves and repeated high and low resistance changes were also observed in metal a surface/tunneling gap/metal STM tip junction like as static metal nanogap structures which are fabricated on insulator substrates. This results...
In this paper, a theoretical and Monte-Carlo analysis on the percolation behavior of single-walled carbon nanotube (SWNT) network is proposed. For such network structures that are commonly used as the conduction channels of thin-film transistors (TFTs), the dependence of channel resistance on channel length, tube density, and average tube length is carefully studied. The tube-tube contact resistance...
Memristor, as the fourth circuit element which is both a non-linear and a memory device, has been receiving extensive attention in the past years. Recently, the memristive phenomena observed on single layer MoS2 has attracted scientists attention to the realization of memristor on novel two-dimensional thin film materials. This article presents a novel two-terminal memory device based thin film two-dimensional...
We have made transient photoluminescence (PL) study on electron-spin dynamics in InGaAs-based coupled nanostructures of quantum dots (QDs) with quantum wells (QWs). Self-assembled InGaAs QDs were grown integrated with an InGaAs QW through a GaAs tunneling barrier or embedded in a GaAs QW. Time-resolved circularly polarized PL in the QDs was measured as a function of temperature after optical spin...
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