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Two-dimensional materials are layered materials with outstanding electrical and optical properties in atomic thickness. Here we report on a back-gate transistor with a two-dimensional material WSe2 as channel material. Our device shows a significant mobility enhancement by Atomic layer deposition (ALD), from ∼0.95 cm2/Vs to ∼26 cm2/Vs. Moreover, we explored the hysteresis phenomenon in our device...
Transition-metal dichalcogenide (TMDC) monolayer is a very promising two-dimensional material for future transistor technology. TMDC monolayer, owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance MOSFET. In this work, we focus on band structure and carrier mobility calculations for typical TMDC such as WS2 and MoS2...
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