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Ag/SiO2/Pt memristors are fabricated to investigate their resistive switching characteristics. The devices exhibit stable and reversible nonvolatile bipolar resistive switching behavior under DC voltage sweeps with a current compliance (CC) of 1 mA. Moreover, electroforming process is not required in the first I–V cycle, the values of VSET and VRESET are 0.2 V and −0.2 V, respectively. Meanwhile,...
In this letter, we investigated a new interface-type conduction mechanism in ITO/Ga2O3:ITO/TiN resistance random access memory induced by varying forming current compliance. This conduction showed a typical bipolar resistive switching (RS) and a size effect experiment was applied to confirm that the conduction mechanism was an interface-type when forming current compliance was set below 1mA. Current...
Resistance switching of metal nanogap structures were observed using a scanning tunneling microscope (STM) equipment. Clear negative differential resistances in current-voltage curves and repeated high and low resistance changes were also observed in metal a surface/tunneling gap/metal STM tip junction like as static metal nanogap structures which are fabricated on insulator substrates. This results...
Increasing the energy efficiency of magnetic memories has been the focus of many research labs in the past decades. Spin polarized current-based switching, although demonstrating promising results, is still far from the fundamental energy limits of the magnetic logic. In order to take a leap towards the inherent energy advantages of the magnetic logic, the principle of straintronics has been proposed...
This paper attempts to discuss a selective overview of some recent trends & concepts in the field of unconventional (non-Von Neumann) computing paradigms using emerging non-volatile nanoscale resistive memory technology (RRAM). Case studies for dedicated nanoscale hardware used in non-spike based machine learning (ML) driven architectures such as- (i) Extreme Learning Machines (ELMs) and (ii)...
Memristor, as the fourth circuit element which is both a non-linear and a memory device, has been receiving extensive attention in the past years. Recently, the memristive phenomena observed on single layer MoS2 has attracted scientists attention to the realization of memristor on novel two-dimensional thin film materials. This article presents a novel two-terminal memory device based thin film two-dimensional...
A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the...
Lateral ReRAM (Resistive Random Access Memory) made of Cu/WOX/Cu was formed, and its operation was investigated in a transmission electron microscope (TEM) to elucidate the switching mechanism. Resistive switching behavior was realized in TEM. At the Set process changing the device state from high resistance state (HRS) to low resistance state (LRS), a Cu conductive filament grew up from the cathode...
We are proposing a new active thermal-electronic device, the phonsistor (= phonon transistor). This device operates by means of thermal or hot electron coupling between adjacent domains containing metal-insulator transition (MIT) material. The MIT resistor itself has got thyristor-like I–V characteristics due to the high electric field and/or Joule heating and extremely strong step-like resistance...
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