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Electric-field control of spin states has been studied in InGaAs-based coupled nanostructures composed of quantum dots (QDs) and wells (QWs), where electron spins optically excited in the QW can be transferred into the QDs via tunneling depending on the strength of applied electric field. The photoluminescence (PL) intensity in the QDs and the circular polarization, reflecting the electron-spin states...
We have made transient photoluminescence (PL) study on electron-spin dynamics in InGaAs-based coupled nanostructures of quantum dots (QDs) with quantum wells (QWs). Self-assembled InGaAs QDs were grown integrated with an InGaAs QW through a GaAs tunneling barrier or embedded in a GaAs QW. Time-resolved circularly polarized PL in the QDs was measured as a function of temperature after optical spin...
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