The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can...
GaAs nanowires fabricated by an anodic etching have some advantages over conventional dry crystal growth and wet chemical dissolution techniques in terms of their formation. However, undesired electrical insulating behavior caused by deep interface states is observed. It is known that the interface states originate from the dissociated As atoms between GaAs core and Ga2O3 outer layer. Here, we investigated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.