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Continuous-wave (CW) terahertz (THz) photomixers are fabricated using 1-D nanocontacts on low-temperature-grown (LTG) GaAs and InGaAs, for operation wavelengths of 850 nm and 1550 nm, respectively. Silver (Ag) nanowire (NW) used as the nanocontact is aligned between the antennas patterned onto these photoconductive material by dielectrophoresis (DEP) technique. Reliable photocurrent measurements for...
This paper reports on direct detection of electromagnetic radiation at 300GHz by using low cost commercially available GaAs high electron mobility field effect transistors (FETs) without any specially attached antennas. The effect of gate voltage bias on the photovoltaic response of the transistor was investigated. Measurements show that conventional RF FETs can be used as broadband THz detectors...
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