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Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building blocks for future low-power integrated circuits and CMOS technology devices. Here we report on recent advances in vertical TFETs using III–V/Si heterojunctions. These heterojunctions, which are formed by direct integration of III–V nanowires (NWs) on Si, are promising tunnel junction for achieving steep...
Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current...
This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (∼109) is achieved due to...
Interest in resorbable and biodegradable materials originates from their potential in food packaging, environmental science and ecology, but also in medicine and biotechnology. Till very recently, electronics has not been on such development paths. However, recent advancements in material science, thin processing and nanotechnology offer the prospective of high performance electronic devices which...
A two terminal nanoscale device showing inherent stochastic behavior can be a key enabler for a wide range of applications such as stochastic computing, machine learning and neuromorphic engineering. In this article we investigate the inherent stochasticity associated with two key attributes of phase-change memory devices, namely, threshold switching and memory switching. The physical origin of this...
The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps induce a sizable degradation of the ON-current, which can be recovered through the application of a suitable strain, provided the quantization effects, which increase by scaling the NW lateral size, do not become too large.
The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our simulations that tri-gate AlGaN/GaN HEMTs can exhibit higher breakdown voltages and operate closer to the theoretical limit for GaN devices than their planar...
The impact of surface roughness (SR) and phonon scattering on extremely narrow InAs-Si Nanowire TFETs is studied in this paper. The rough surface of the nanowire is generated by randomly distributing the atoms at the InAs-Si/Oxide interface according to an Ando-like exponential auto-correlation function. Phonons are atomistically treated by means of the valence-force-field method. A full-band and...
A comprehensive description of band gap and effective masses of III–V semiconductor bulk and ultra-thin body (UTB) structures under realistic biaxial and uniaxial strain is given using numerical simulations from four different electronic structure codes. The consistency between the different tools is discussed in depth. The nearest neighbor sp3d5s* empirical tight-binding model is found to reproduce...
In this work we demonstrate, for the first time, the advantages of GaN HEMTs on bulk GaN substrates over similarly processed devices on Sapphire and Silicon substrates, intended for power applications, in terms of on-state and off-state operation as well as reliability, where self-heating, off-state leakage, and trapping effects are minimal. MIS-HEMTs with breakdown voltage of ∼670 V and off-state...
The U.S. offers multiple mechanisms for funding both small and large businesses to promote innovations in science and industry. However, dating back to the 80s many U.S. companies have chosen to take products created domestically and manufacture them overseas. This has been a particularly disturbing trend in the semiconductor business leading to the loss of jobs and technical expertise as students,...
This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. The potential social impact on this technology on energy savings and the environment is briefly discussed.
A novel boosted MOS structure with buried n-well current booster providing >2× higher drive current and low off current is experimentally demonstrated on 28 nm bulk silicon technology. TCAD analysis is performed to investigate the boosting mechanism as well as to demonstrate scalability to 7 nm FinFET technology. Constant bias applied to the booster terminal results in a gate voltage controlled...
This paper introduces a two-dimensional physics-based compact model for a double-gate (DG) Tunnel-FET (TFET) implemented in Verilog-A. The compact model is derived from an analytical model published in [1], [2], [3]. TCAD Sentaurus simulation data as well as measurement data are used to verify and show the flexibility of the modeling approach. Advantages and limitations of the compact model are analyzed...
A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based...
The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope...
We demonstrate the integration of large area graphene transparent conductive electrodes in flexible amorphous silicon multispectral (MS) photodetectors (PD). These MS diodes show a bias dependent maximum of their spectral response between the ultraviolet (UV) and visual wavelength range. This ability to shift the response maximum by external bias without the use of filter-structures and the possibility...
We investigated the floating gate memory based on MoS2 channel with metal nanoparticle charge trapping layer and polymer tunneling dielectric. Here, highly conformal and stable polymer insulator layer deposited via initiated chemical vapor deposition (iCVD) facilitates the fabricated floating gate memory to endure a substantial electrical stress significantly. To form a selective density and controllable...
The extreme resolution of CO2 gas molecules sensing, i.e., detection of single molecule, is reported. The suspended bilayer graphene beam is exploited in order to isolate the sensing part of the device from the substrate noise. Using the electrostatic force, the central part of the suspended beam is pulled-down to bottom metal electrode, which leads to two slanted graphene beams in suspension with...
The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. In this invited contribution, we intend to summarize the current knowledge on suspended CNFETs as NO2 sensors. Sensor recovery within minutes through self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis,...
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