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SCM application gives ReRAM opportunity to become mainstream technology, beyond embedded field. Memory reliability improvement and memory/selector co-optimization are still required. To offer better performance/cost trade-off and differentiate from other technologies are necessary for ReRAM to step forward.
The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability...
The contact resistance RC of “edge-contacted” metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create “edge contacts”. The parameter space for different hole patterns in graphene is explored. The contact resistance is reduced from 1518 Ωµm for structures without holes to 456 Ωµm in structures...
While the 3D sequential process is still under development, the electrical influence of specific process for the bottom tier needs to be studied. As another MOS transistor layer is fabricated on top of the bottom one, contamination risk and thermal stability issues appear, thus requiring adaptation of conductors/dielectrics for intermediate Back-End Of Line (iBEOL) processing. As materials differ...
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