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Electrical transport and thermoelectric properties of thin indium arsenide nanowires have been investigated in the temperature range between 100 K and 365 K. Charge carrier concentration was varied by a back-gate electrode. In nanowires with a diameter of 20 nm, discrete conductance plateaus are observed at low temperature indicating one-dimensional quantization of the density of states. A mean free...
The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe...
The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability...
We demonstrate the effectiveness and limitations of critical performance elements in silicon channel bulk finFET CMOS devices featuring embedded Source/Drain (e_SD) dual epi. Further scaling of the fin width below 10nm is shown to impact both the access resistance and S/D overlap capacitances while the mobility behavior for both nMOS and pMOS devices further degrades. Epitaxial S/D regrowth options...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access memory (RRAM) and the optimization of the devices and arrays are addressed and reviewed. The review focuses on our research achievements on the unified physical mechanism, physical-based models including switching and reliability behaviors, and the optimization design issues of the oxide-based RRAM.
In its standard formulation the drift-diffusion (DD) model frame cannot describe the influence of the ballistic resistance on the device characteristics. This results in considerable problems in calibrating the short channel behavior of advanced devices. In this paper, we propose a new formulation for the inclusion of the ballistic resistance into the DD model frame consisting in adding a simple ballistic...
In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (∼ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage...
Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current...
This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. The potential social impact on this technology on energy savings and the environment is briefly discussed.
The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope...
The extreme resolution of CO2 gas molecules sensing, i.e., detection of single molecule, is reported. The suspended bilayer graphene beam is exploited in order to isolate the sensing part of the device from the substrate noise. Using the electrostatic force, the central part of the suspended beam is pulled-down to bottom metal electrode, which leads to two slanted graphene beams in suspension with...
In this work, we study the impact of Si and Al implantation on the current conduction mechanisms and operation of 1T-1R TiN/HfO2/Ti/TiN based ReRAM devices. The pre-forming current and forming voltage evolution clearly reveal different trends as a function of the implanted dose and species. We link our results to the microscopic structure of the material using a first principles approach.
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