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We extend our drift-diffusion based model for the carrier energy distribution function (DF), which was derived to describe hot-carrier degradation in LDMOS transistors, for the case of decananometer nMOSFETs with a gate length of 65 nm. This approach is based on an analytical expression for the DF with parameters obtained from the drift-diffusion model. To approximately consider the important effect...
Interest in resorbable and biodegradable materials originates from their potential in food packaging, environmental science and ecology, but also in medicine and biotechnology. Till very recently, electronics has not been on such development paths. However, recent advancements in material science, thin processing and nanotechnology offer the prospective of high performance electronic devices which...
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