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SCM application gives ReRAM opportunity to become mainstream technology, beyond embedded field. Memory reliability improvement and memory/selector co-optimization are still required. To offer better performance/cost trade-off and differentiate from other technologies are necessary for ReRAM to step forward.
While the 3D sequential process is still under development, the electrical influence of specific process for the bottom tier needs to be studied. As another MOS transistor layer is fabricated on top of the bottom one, contamination risk and thermal stability issues appear, thus requiring adaptation of conductors/dielectrics for intermediate Back-End Of Line (iBEOL) processing. As materials differ...
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