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Bipolar resistive switching random access memory (RRAM) devices on a plastic substrate are investigated. Strontium titanate nickelate (STN) thin film prepared by sol-gel method served as insulator on an Al/STN/ITO/PET structure. The STN-based flexible RRAM shows a high ON/OFF resistance ratio (≥ 105) and a retention ability of over 105 s. The characteristics of Ni in the STO thin films demonstrate...
Electrical reliability of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) fabricated from conventional or flexible display technology are compared under positive or negative gate bias stress (PBS/NBS). Conventional TFTs have better initial characteristic than flexible TFTs, and better stability under PBS, while flexible TFTs have better stability under NBS. Mechanical reliability...
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