The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge [1], which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si [2, 3]. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge [4]. In this work,...
In 1991, Soref and Perry presented a concept paper on the properties of a hypothetical ternary Ge1−x−ySixSny alloy for silicon-compatible optoelectronic applications.1 The material was finally synthesized at Arizona State University in 2003,2 opening up a new field of research that is rapidly approaching its first one-thousand publications. A very recent review article by Wirths, Buca, and Mantl provides...
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1−xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1−xSnx optoelectronic devices into the mid-infrared range.
It is theoretically predicted that biaxial tensile strain as much as 1.4% can make up the 136 meV gap between the Γ and L valley in Ge [1], thereby converting Ge from an indirect-bandgap semiconductor into a direct-bandgap one that can emit light efficiently covering the telecom band. The mobility of both carriers is dramatically increased simultaneously. Therefore, tensile-strained Ge has drawn large...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.