The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper designed the gate driver circuits and optimized the PCB layout in a 7.2kW battery charger using paralleled GaN HEMTs. 650V/60A enhancement mode GaN HEMTs provided by GaN Systems Inc are adopted. To optimize the switching performance of paralleled GaN HEMTs with low loss and high reliability, effects of parasitic inductance and capacitance are modeled and analyzed. Through cancelling the...
Normally-on high-voltage (HV) power transistors are usually operated in a series connection with low-voltage (LV) MOSFETs to ensure safe operation. In the widely used cascode configuration (CC) the status of the combined switch is controlled via the MOSFET gate, whereas the alternative direct drive (DD) method controls the gate of the HV switch directly and utilizes the LV transistor as a safety switch...
Enhancement-mode GaN HFETs enable efficient high-frequency converter design, but this technology is relatively new and exhibits different characteristics from Si or SiC MOSFETs. GaN performance at elevated temperature is especially unique. Turn-on time increases significantly with temperature, and turn-on losses increase as a result. This phenomenon can be explained based on the relationships between...
Envelope tracking (ET) is an appealing alternative to the widely used Doherty power amplifier (PA) due to its potential to increase efficiency, particularly for high data rate transmissions. In this work, we demonstrate a 28 V, 865 MHz switching speed step-down converter that can be applied to envelope tracking. The converter's ET capability is demonstrated at up to 865 MHz PWM carrier frequency....
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.